Figure 1 Growth sequence of RF-MOMBE and spectrum of a nitrogen RF plasma. (a) Growth sequence of RF-MOMBE pulses for InAlN films. (b) A typical optical emission spectrum
of a nitrogen RF plasma at 400 W/0.7 sccm. The X-ray diffraction (Siemens D5000, Siemens Co., Munich, Germany) measurements were carried out in a θ-2θ coupled geometry SAR302503 purchase using Cu-Kα radiation to identify the presence of secondary phases or crystalline structures. The lattice parameters of In x Al1-x N films and the value of x were calculated by high-resolution X-ray diffraction (Bruker D8, Bruker Optik GmbH, Ettlingen, Germany). The diffraction angle 2θ was scanned from 20° to 40° at 0.005°/s. The surface and cross-sectional morphologies of the In x Al1-x N films were analyzed using a field-emission scanning electron microscope (FE-SEM, Hitachi S-4300, Hitachi, Ltd., Chiyoda, Tokyo, Japan). The microstructure of the InAlN films was investigated in detail by TEM in cross-sectional configuration (TEM, Philips Tecnai 20 (FEI/Philips Electron Optics, Eindhoven, Netherlands) and JEOL 2010 F (JEOL Ltd., Akishima, Tokyo, Japan)). The In x Al1-x N Selleckchem STA-9090 film’s composition was determined with HRXRD. The optical reflectance
measurements were performed by using a UV/Vis/IR reflection spectrophotometer with integrating sphere (PerkinElmer Lambda 900, PerkinElmer, Waltham, MA, USA) from 200 to 2,000 nm. Results and discussion Figure 2a shows the θ-2θ scan XRD pattern for the InAlN films grown at 530°C with the TMIn/TMAl flow ratio of 1.29, 1.4, 1.51, and 1.63. The XRD pattern indicated that the peaks corresponding to InAlN (0002), ( ), ( ), and ( ) were observed for InAlN films grown on the Si(100) substrate. Also, the XRD results of InN and InAlN films reveal that all the films are of wurtzite structure which is preferentially oriented in the c-axis direction. click here No metallic indium peak was detected in the XRD pattern. In addition, it is clearly observed that peaks of all InAlN shifted depending on In composition.
However, the crystalline quality of the InAlN films degrades with increasing Al content. The result is in agreement with the report of Houchin et al.[9]. Figure 2 XRD analysis of InAlN films. (a) θ-2θ XRD pattern of InAlN films deposited on Si(100) with various In compositions. (b) Composition dependence of the calculated a-axis and c-axis lattice parameters of InAlN alloys. Vegard’s law [22] has been applied to determine the average In composition of the ternary alloy films via BAY 80-6946 clinical trial measurement of lattice parameters from HRXRD. Assuming Vegard’s law to hold for In x Al1-x N and considering the biaxial strain in the layer, the indium composition can be determined by applying the relation. Therefore, the exact indium mole fraction x of the alloy, considering the deformation of the unit cell, is where ν (x) is Poisson’s ratio defined as ν (x) = 2C 13/C 33; C 13 and C 33 are the elastic constants of the hexagonal III-nitrides.